But as the reader of this book, I brought it for the author through a kind of real-time translation. I changed the boring and the vague into the concrete and specific (aided by long practice in reading multiple kinds of literature daily).
READ BOOK Memory's 15
Previous re-read entries are here. The Wheel of Time Master Index is here, which has links to news, reviews, interviews, and all manner of information about the Wheel of Time in general. The index for all things specifically related to the final novel in the series, A Memory of Light, is here.
On the flip side, individuals with poor working memory skills at a disadvantage. They are more likely to struggle with mathematics and reading. They may also struggle with following spoken directions. There is too much to juggle, and they lose track of what they are supposed to do.
Working memory problems can make it more difficult for young children learning to read. And deficits in verbal working memory have been linked with reading comprehension problems in older children (Peng et al 2018).
There are many benefits to reading, from making you smarter to improve your reading and writing skills. If you want to understand what benefits one could reap from developing the habit of reading, then we have enlisted the top 10 benefits here.
When you read a great story, all your stress seems to slip away and relax you since you tend to travel mentally in a different realm. Sometimes while reading, you come across valuable advice or solutions to your problems.
Since the onset of civilization, we have grown and developed mentally. Many learned scholars give credit to the erudite tomes written by our predecessors for our knowledge. The importance of reading books is now more than ever since. Not everything is available in digitalized form.
There are numerous ways to learn more about life, from self-help books to reading fiction. Even when you feel demotivated, you can read an inspirational biography to lift your mood. One of the great benefits of reading books is that the knowledge you gain from them can never be taken away from you. Unlike worldly possessions, your knowledge will stay with you till the end of time.
If you are not yet convinced on why reading books is important, this might interest you. When you develop the habit of reading, you enhance your vocabulary. Reading any type of book can improve your vocabulary to an impressive extent.
Regular reading is a great exercise for your brain. If you read a fictional book, your brain is forced to remember the names and nature of various characters. Going back to their history and remembering events or plots is fun and improves your memory.
One of the greatest benefits of reading daily is that your brain becomes super powerful. An amazing fact about our brain is that it can retain a great amount of information, and with every new memory, your brain creates new brain pathways or synapses. [3].
If you are still wondering what other benefits of reading regularly are, consider this! One of the most amazing benefits of reading every day is that it can improve your analytical skills. Reading mystery novels helps you develop skills that can assist you in problem-solving.
Keeping yourself occupied with reading for about 20 to 30 minutes can be great for your brain. It can help you with better focus and concentration. You may have been doing it wrong for those who still find it difficult to develop focus or concentrate properly
We are not just talking about writing fiction, books, novels, etc. Even when writing something in everyday personal and professional life, your writing skills would have improved with regular reading.
From health benefits to getting smarter, there are numerous benefits that regular reading can offer. You can expect to enhance your knowledge about so many things if you just develop this habit of reading books regularly. It might appear boring unless you start, but once it is assured, once you get a grip of reading, you will be thanking yourself for this habit.
Random access memory referred to as RAM can either be volatile or non-volatile. A volatile memory loses its previous stored data on removing the power supply as is the case for dynamic random-access memory (DRAM) and static random-access memory (SRAM). For non-volatile memory, the contents that were stored previously will continue to be retained even after the removal of the supply. Flash memory is a typical example of non-volatile memory. Memory technologies combine the advantages and disadvantages to achieve higher performance, e.g. DRAMs employed in a computer system has high capacity and density, but they are volatile, meaning there is a need to refresh every few milliseconds. Due to this refreshing, the energy consumption of the device increases which is not desirable. SRAM, on the other hand, is fast but it is also volatile just like the DRAM; in addition, SRAM cells are of larger size which hinders its implementation on a large scale. Flash memory, which essentially consists of a metal-oxide-semiconductor field-effect-transistor (MOSFET) in addition to a floating gate in each memory cell, is currently being used extensively particularly for the embedded applications owing to its low cost and high density. Depending upon how memory cells are organized, Flash memory is classified as NOR Flash and NAND Flash [1]. In NOR Flash, cells are read and programmed individually as they are connected in parallel to bit lines. This resembles the parallel connection of transistors in a CMOS NOR gate architecture. For the case of NAND Flash, the architecture resembles that of a CMOS NAND gate as the cells are connected in series to the bit lines. It must be noted that less space is consumed by the series connection as compared to the parallel one which results in a reduced cost of NAND Flash. However, both types of Flash memories suffer from several disadvantages such as low operation speed (write/erase time: 1 ms/0.1 ms), limited endurance (106 write/erase cycles), and high write voltage (> 10 V) [2].
A detailed comparison of existing and emerging memory technologies is shown in Table 1. As is evident from the table, STT-MRAM and PCM have advantages of a smaller area compared to that of SRAM. While STT-MRAM offers fast write/read speed, long endurance, and low programming voltage, on the other hand, PCM has a disadvantage of extensive write latency. RRAM has a lower programming voltage and faster write/read speed compared to Flash and is seen as potential replacement of Flash memory. Among all the emerging memory technology candidates, RRAM has significant advantages such as easy fabrication, simple metal-insulator-metal (MIM) structure, excellent scalability, nanosecond speed, long data retention, and compatibility with the current CMOS technology, thus offering a competitive solution to future digital memory [16]. The most significant advantages of RRAM are depicted in Fig. 1.
Resistive random access memory involves frequent transitions between a high resistance state (HRS) and low resistance state (LRS). Each switching event between the resistive states can introduce permanent damage and cause degradation of the RRAM performance. Endurance is thus defined as the number of times a RRAM device can be switched between the HRS and the LRS while ensuring a reliably distinguishable ratio between them [101]. Thus, an endurance test determines the maximum number of set/reset cycles that can be switched effectively before the HRS and the LRS are no longer distinguishable. The endurance characteristics of RRAM are obtained by performing a sequence of I-V sweeps in a resistive switching cell and the subsequent extraction of RHRS and RLRS on the application of a read voltage (typically 0.1 V) [41]. This method is reliable as one can obtain the correct switching of the device in each cycle; however, this method is very slow because the time required for obtaining an I-V sweep can be very higher particularly if the lower currents are involved.
The endurance cycles in a HfOx RRAM cell shows a strong dependence on the cell size, as is depicted in Fig. 6a, wherein better endurance in RRAM device with larger cell size is reported. In addition, vertically reducing the layer thickness results in degradation of endurance performance for SET voltage at 2.5 V as shown in Fig. 6b [102]. This degradation in endurance performance with downscaling of the switching layer is a result of the reduced number of ions in the active region. HfOx-based RRAM exhibits an excellent endurance performance of 106 cycles on a 1-kb array with 30-nm cell size under 0.18 μm technology and the same is shown in Fig. 6c [103]. By adding an extra layer of AlOx above the bottom electrode (BE), array stability can be improved further as read disturb immunity for HRS is increased. For TaOx-based RRAM, a degradation in endurance performance with increasing pulse width and amplitude of RESET voltage was observed in Ta/Ta2O5/TiN RRAM structure [105]. A comparison of TiN and Ru bottom electrode in the Ta/Ta2O5/TiN RRAM shows that the main cause of endurance degradation is due to the reaction of oxygen ions with TiN electrode. Furthermore, an improved endurance of 109 switching cycles was obtained without verification in a similar RRAM structure by reducing the Ta2O5 layer down to 3 nm [106] and use of triangular pulse having μA, indicating low power consumption of the array. The resistive switching devices with endurance higher than 1012 cycles have been reported in different types of RRAM cells involving tantalum oxide (TaO x)-based switching mediums [32, 36, 59]. Thus, tantalum oxide-based RRAM devices seem to be exhibiting the highest endurance. 2ff7e9595c
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